SFR9110TF
- Mfr.Part #
- SFR9110TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 2.8A DPAK
- Stock
- 6,060
- In Stock :
- 6,060
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 335pF @ 25V
- Terminal Finish :
- MATTE TIN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 1.4A, 10V
- DS Breakdown Voltage-Min :
- 100V
- JESD-30 Code :
- R-PSSO-G2
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±30V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 20W Tc
- Reach Compliance Code :
- Unknown
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 31 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 11A
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- P-Channel
- Datasheets
- SFR9110TF

P-Channel Tape & Reel (TR) 1.2 Ω @ 1.4A, 10V ±30V 335pF @ 25V 10nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
SFR9110TF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 31 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 335pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.8A.Pulsed drain current is maximum rated peak drain current 11A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SFR9110TF Features
the avalanche energy rating (Eas) is 31 mJ
based on its rated peak drain current 11A.
a 100V drain to source voltage (Vdss)
SFR9110TF Applications
There are a lot of Rochester Electronics, LLC
SFR9110TF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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