SFR9110TF
- Mfr.Part #
- SFR9110TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 2.8A DPAK
- Stock
- 17,682
- In Stock :
- 17,682
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 2.8A
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 2.8A Tc
- Reach Compliance Code :
- Unknown
- DS Breakdown Voltage-Min :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 11A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Power Dissipation-Max :
- 2.5W Ta 20W Tc
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Drain to Source Voltage (Vdss) :
- 100V
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 335pF @ 25V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 10nC @ 10V
- JESD-30 Code :
- R-PSSO-G2
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 1.4A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 31 mJ
- Terminal Finish :
- MATTE TIN
- Number of Elements :
- 1
- Datasheets
- SFR9110TF

P-Channel Tape & Reel (TR) 1.2 Ω @ 1.4A, 10V ±30V 335pF @ 25V 10nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
SFR9110TF Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 31 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 335pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 2.8A.Pulsed drain current is maximum rated peak drain current 11A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
SFR9110TF Features
the avalanche energy rating (Eas) is 31 mJ
based on its rated peak drain current 11A.
a 100V drain to source voltage (Vdss)
SFR9110TF Applications
There are a lot of Rochester Electronics, LLC
SFR9110TF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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