SCT10N120

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Mfr.Part #
SCT10N120
Manufacturer
STMicroelectronics
Package / Case
TO-247-3
Datasheet
Download
Description
SICFET N-CH 1200V 12A HIP247
Stock
47
In Stock :
47

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
22nC @ 20V
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Package / Case :
TO-247-3
Rds On (Max) @ Id, Vgs :
690m Ω @ 6A, 20V
Continuous Drain Current (ID) :
12A
Packaging :
Tube
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Operating Temperature :
-55°C~200°C TJ
Drive Voltage (Max Rds On,Min Rds On) :
20V
FET Type :
N-Channel
Vgs (Max) :
+25V, -10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
290pF @ 400V
Power Dissipation-Max :
150W Tc
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Base Part Number :
SCT10
Mount :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Drain to Source Voltage (Vdss) :
1200V
Datasheets
SCT10N120
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics SCT10N120 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-55°C~200°C TJ, Mounting Type:Through Hole, Base Part Number:SCT10, SCT10N120 pinout, SCT10N120 datasheet PDF, SCT10N120 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics SCT10N120 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics SCT10N120


N-Channel Tube 690m Ω @ 6A, 20V +25V, -10V 290pF @ 400V 22nC @ 20V 1200V TO-247-3

SCT10N120 Description


This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device?ˉs housing in the proprietary HiP247? package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.



SCT10N120 Features


  • Very tight variation of on-resistance vs. temperature

  • Very high operating junction temperature capability (TJ = 200 ??C)

  • Very fast and robust intrinsic body diode

  • Low capacitance



SCT10N120 Applications


  • Solar inverters, UPS

  • Motor drives

  • High voltage DC-DC converters

  • Switch mode power supplies


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