SBSP52T1G
- Mfr.Part #
- SBSP52T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 1A SOT223
- Stock
- 13,536
- In Stock :
- 13,536
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Mounting Type :
- Surface Mount
- Published :
- 1997
- Factory Lead Time :
- 11 Weeks
- Operating Temperature :
- -65°C~150°C TJ
- Power - Max :
- 800mW
- Polarity :
- NPN
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Number of Pins :
- 4
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 4
- Max Power Dissipation :
- 800mW
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 1.3V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- NPN - Darlington
- Terminal Form :
- Gull wing
- Datasheets
- SBSP52T1G

NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBSP52T1G Overview
DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.In extreme cases, the collector current can be as low as 1A volts.
SBSP52T1G Features
the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
SBSP52T1G Applications
There are a lot of ON Semiconductor
SBSP52T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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