SBSP52T1G

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Mfr.Part #
SBSP52T1G
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN DARL 80V 1A SOT223
Stock
13,536
In Stock :
13,536

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
4
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 500μA, 500mA
Mounting Type :
Surface Mount
Published :
1997
Factory Lead Time :
11 Weeks
Operating Temperature :
-65°C~150°C TJ
Power - Max :
800mW
Polarity :
NPN
Halogen Free :
Halogen Free
Terminal Position :
Dual
Number of Pins :
4
Current - Collector Cutoff (Max) :
10μA
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Reach Compliance Code :
not_compliant
Number of Terminations :
4
Max Power Dissipation :
800mW
RoHS Status :
ROHS3 Compliant
Max Collector Current :
1A
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Tin (Sn)
Surface Mount :
yes
Collector Emitter Breakdown Voltage :
80V
Collector Emitter Voltage (VCEO) :
1.3V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Case Connection :
COLLECTOR
JESD-609 Code :
e3
Package / Case :
TO-261-4, TO-261AA
Transistor Type :
NPN - Darlington
Terminal Form :
Gull wing
Datasheets
SBSP52T1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBSP52T1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-65°C~150°C TJ, Number of Pins:4, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, SBSP52T1G pinout, SBSP52T1G datasheet PDF, SBSP52T1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBSP52T1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBSP52T1G


NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 4 Terminations SILICON TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

SBSP52T1G Overview


DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.In extreme cases, the collector current can be as low as 1A volts.

SBSP52T1G Features


the DC current gain for this device is 2000 @ 500mA 10V
the vce saturation(Max) is 1.3V @ 500μA, 500mA


SBSP52T1G Applications


There are a lot of ON Semiconductor
SBSP52T1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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