SBCP68T1G
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- Mfr.Part #
- SBCP68T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 1A SOT223
- Stock
- 900
- In Stock ：
- 900
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Power Dissipation :
- 1.5W
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 20V
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 20V
- Factory Lead Time :
- 9 Weeks
- Series :
- Automotive, AEC-Q101
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 500mA 1V
- Number of Elements :
- 1
- Pin Count :
- 4
- Collector Emitter Breakdown Voltage :
- 20V
- Gain Bandwidth Product :
- 60MHz
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- hFE Min :
- 85
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Lead Free :
- Lead Free
- Number of Pins :
- 4
- Base Part Number :
- BCP68
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Frequency :
- 60MHz
- Max Collector Current :
- 1A
- Collector Base Voltage (VCBO) :
- 25V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Datasheets
- SBCP68T1G
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NPN -65°C~150°C TJ 10μA ICBO 1 Elements NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP68T1G Overview
This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 100mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A breakdown input voltage of 20V volts can be used.A maximum collector current of 1A volts is possible.
SBCP68T1G Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
SBCP68T1G Applications
There are a lot of ON Semiconductor
SBCP68T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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