SBCP56T3G
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- Mfr.Part #
- SBCP56T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 11,163
- In Stock ：
- 11,163
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transition Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Height :
- 1.65mm
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Length :
- 6.7mm
- Collector Base Voltage (VCBO) :
- 100V
- Max Power Dissipation :
- 1.5W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 500mV
- Max Frequency :
- 35MHz
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 3.7mm
- Pin Count :
- 4
- Number of Pins :
- 4
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Base Part Number :
- BCP56
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1A
- Frequency - Transition :
- 130MHz
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Datasheets
- SBCP56T3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56T3G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 130MHz.A maximum collector current of 1A volts can be achieved.
SBCP56T3G Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56T3G Applications
There are a lot of ON Semiconductor
SBCP56T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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