SBCP56T1G
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- Mfr.Part #
- SBCP56T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 2,008
- In Stock ：
- 2,008
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Max Power Dissipation :
- 1.5W
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Published :
- 2005
- JESD-609 Code :
- e3
- Max Collector Current :
- 1A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 4
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 100V
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 130MHz
- Power Dissipation :
- 1.5W
- Gain Bandwidth Product :
- 130MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Frequency :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- BCP56
- Number of Terminations :
- 4
- Series :
- Automotive, AEC-Q101
- Surface Mount :
- yes
- Case Connection :
- COLLECTOR
- Terminal Form :
- Gull wing
- Datasheets
- SBCP56T1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56T1G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
SBCP56T1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56T1G Applications
There are a lot of ON Semiconductor
SBCP56T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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