SBCP56T1
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- Mfr.Part #
- SBCP56T1
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 8,000
- In Stock ：
- 8,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -65°C~150°C TJ
- Radiation Hardening :
- No
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1.5W
- Base Part Number :
- BCP56
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Power Dissipation :
- 1.5W
- Transition Frequency :
- 130MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 130MHz
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Number of Pins :
- 4
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Gain Bandwidth Product :
- 130MHz
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Datasheets
- SBCP56T1
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56T1G Overview
In this device, the DC current gain is 40 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
SBCP56T1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56T1G Applications
There are a lot of ON Semiconductor
SBCP56T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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