SBCP56-16T3G
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- Mfr.Part #
- SBCP56-16T3G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SOT223
- Stock
- 9,322
- In Stock ：
- 9,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 130MHz
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BCP56
- Number of Pins :
- 4
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Transistor Type :
- NPN
- Power - Max :
- 1.5W
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.5W
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Gain Bandwidth Product :
- 130MHz
- Max Collector Current :
- 1A
- Factory Lead Time :
- 8 Weeks
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 4
- Published :
- 2011
- Pin Count :
- 4
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 500mV
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Position :
- Dual
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- SBCP56-16T3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP56-16T3G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.130MHz is present in the transition frequency.An input voltage of 80V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.
SBCP56-16T3G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
SBCP56-16T3G Applications
There are a lot of ON Semiconductor
SBCP56-16T3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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