SBCP53T1G
- Mfr.Part #
- SBCP53T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A SOT223
- Stock
- 5,118
- In Stock :
- 5,118
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- BCP53
- Power Dissipation :
- 1.5W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 50MHz
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Number of Pins :
- 4
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 1.5A
- Operating Temperature :
- -65°C~150°C TJ
- Max Power Dissipation :
- 1.5W
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 100V
- Configuration :
- Single
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Max Collector Current :
- 1.5A
- Surface Mount :
- yes
- Published :
- 2008
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Terminations :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 50MHz
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 2V
- Pin Count :
- 4
- Datasheets
- SBCP53T1G

PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP53T1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 1.5A volts.
SBCP53T1G Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz
SBCP53T1G Applications
There are a lot of ON Semiconductor
SBCP53T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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