SBCP53-16T1G
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- Mfr.Part #
- SBCP53-16T1G
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 80V 1.5A SOT223
- Stock
- 1,612
- In Stock ：
- 1,612
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Max Breakdown Voltage :
- 80V
- Base Part Number :
- BCP53
- Collector Base Voltage (VCBO) :
- 100V
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 50MHz
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2008
- Frequency :
- 50MHz
- Max Collector Current :
- 1.5A
- Max Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.5W
- Pbfree Code :
- yes
- Series :
- Automotive, AEC-Q101
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 80V
- Surface Mount :
- yes
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 4
- Collector Emitter Saturation Voltage :
- -500mV
- hFE Min :
- 100
- Emitter Base Voltage (VEBO) :
- -5V
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 4
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 8 Weeks
- Datasheets
- SBCP53-16T1G
PNP -65°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
SBCP53-16T1G Overview
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
SBCP53-16T1G Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 50MHz
SBCP53-16T1G Applications
There are a lot of ON Semiconductor
SBCP53-16T1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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