SBC857BWT1G
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- Mfr.Part #
- SBC857BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SC70-3
- Stock
- 6,015
- In Stock ：
- 6,015
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Base Part Number :
- BC85**W
- Configuration :
- Single
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Current - Collector (Ic) (Max) :
- 100mA
- Number of Terminations :
- 3
- Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- PNP
- Max Power Dissipation :
- 150mW
- Polarity/Channel Type :
- PNP
- Transistor Application :
- AMPLIFIER
- Package / Case :
- SC-70, SOT-323
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2015
- Power Dissipation :
- 150mW
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Datasheets
- SBC857BWT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SBC857BWT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
SBC857BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC857BWT1G Applications
There are a lot of ON Semiconductor
SBC857BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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