SBC857BLT1G
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- Mfr.Part #
- SBC857BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 1,834
- In Stock ：
- 1,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- -650mV
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Width :
- 2.64mm
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 1.11mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Terminal Finish :
- Tin (Sn)
- Length :
- 3.04mm
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Published :
- 2005
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Datasheets
- SBC857BLT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC857BLT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 220 @ 2mA 5V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
SBC857BLT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC857BLT1G Applications
There are a lot of ON Semiconductor
SBC857BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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