SBC857BDW1T1G

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Mfr.Part #
SBC857BDW1T1G
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
TRANS 2PNP 45V 0.1A SC88/SC70-6
Stock
3,285
In Stock :
3,285

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Arrays
Max Collector Current :
100mA
Radiation Hardening :
No
Transition Frequency :
100MHz
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
15nA ICBO
JESD-609 Code :
e3
Max Power Dissipation :
380mW
Lead Free :
Lead Free
Surface Mount :
yes
Mounting Type :
Surface Mount
Current - Collector (Ic) (Max) :
100mA
Pin Count :
6
Transistor Application :
AMPLIFIER
Gain Bandwidth Product :
100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
220 @ 2mA 5V
Transistor Type :
2 PNP (Dual)
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Element Configuration :
Dual
Polarity :
PNP
Factory Lead Time :
8 Weeks
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Series :
Automotive, AEC-Q101
Emitter Base Voltage (VEBO) :
-5V
Collector Emitter Breakdown Voltage :
45V
Collector Emitter Saturation Voltage :
-650mV
Number of Pins :
6
Published :
2009
Number of Terminations :
6
Collector Base Voltage (VCBO) :
-50V
Package / Case :
6-TSSOP, SC-88, SOT-363
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Vce Saturation (Max) @ Ib, Ic :
650mV @ 5mA, 100mA
Collector Emitter Voltage (VCEO) :
650mV
Number of Elements :
2
Base Part Number :
BC857BD
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
SBC857BDW1T1G
Introducing Transistors - Bipolar (BJT) - Arrays onsemi SBC857BDW1T1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Number of Terminations:6, Package / Case:6-TSSOP, SC-88, SOT-363, Base Part Number:BC857BD, SBC857BDW1T1G pinout, SBC857BDW1T1G datasheet PDF, SBC857BDW1T1G amp .Beyond Transistors - Bipolar (BJT) - Arrays onsemi SBC857BDW1T1G ,we also offer NCV1413BDR2G, ZXTD4591E6TA, ZXTD6717E6TA, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBC857BDW1T1G


SBC857BDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at

The SBC857BDW1T1G is a 2-Polar NPN Transistor Array from ON Semiconductor. It is housed in a SOT-363 package and has a maximum collector-emitter voltage of 45V and a maximum collector current of 0.1A. This device is designed for use in general purpose switching and amplification applications.

Features of the SBC857BDW1T1G include:
• Low collector-emitter saturation voltage
• High current gain
• Low noise
• High switching speed
• High input impedance
• Low power consumption

Applications of the SBC857BDW1T1G include:
• Automotive electronics
• Industrial control systems
• Power management systems
• Audio amplifiers
• Motor control systems
• Telecommunications systems
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