SBC856BWT1G
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- Mfr.Part #
- SBC856BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SC70-3
- Stock
- 8,662
- In Stock ：
- 8,662
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- -5V
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 65V
- Package / Case :
- SC-70, SOT-323
- Transition Frequency :
- 100MHz
- Published :
- 2005
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Power Dissipation :
- 150mW
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- -650mV
- Max Collector Current :
- 100mA
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 220
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 65V
- Factory Lead Time :
- 10 Weeks
- Base Part Number :
- BC85**W
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 150mW
- Pin Count :
- 3
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Datasheets
- SBC856BWT1G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SBC856BWT1G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
SBC856BWT1G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
SBC856BWT1G Applications
There are a lot of ON Semiconductor
SBC856BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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