SBC856BLT3G
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- Mfr.Part #
- SBC856BLT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 65V 0.1A SOT23-3
- Stock
- 30,675
- In Stock ：
- 30,675
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- -650mV
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.11mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 220 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 65V
- Series :
- Automotive, AEC-Q101
- Collector Emitter Breakdown Voltage :
- 65V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 80V
- Factory Lead Time :
- 4 Weeks
- Continuous Collector Current :
- 100mA
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Max Power Dissipation :
- 300mW
- Width :
- 2.64mm
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Length :
- 3.04mm
- Max Collector Current :
- 100mA
- Surface Mount :
- yes
- hFE Min :
- 220
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 5mA, 100mA
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lead Free :
- Lead Free
- Datasheets
- SBC856BLT3G
PNP -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC856BLT3G Overview
In this device, the DC current gain is 220 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -650mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Maintaining the continuous collector voltage at 100mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
SBC856BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC856BLT3G Applications
There are a lot of ON Semiconductor
SBC856BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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