SBC856BDW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Number of Pins :

6

Number of Elements :

2

Operating Temperature :

-55°C~150°C TJ

Current - Collector Cutoff (Max) :

15nA ICBO

Max Power Dissipation :

380mW

Collector Emitter Voltage (VCEO) :

65V

Collector Base Voltage (VCBO) :

80V

Pbfree Code :

yes

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Terminal Finish :

Tin (Sn)

Current - Collector (Ic) (Max) :

100mA

ECCN Code :

EAR99

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Application :

AMPLIFIER

Transistor Type :

2 PNP (Dual)

Pin Count :

6

Factory Lead Time :

8 Weeks

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

6

Radiation Hardening :

No

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Series :

Automotive, AEC-Q101

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

100MHz

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Published :

2004

Polarity :

PNP

Power Dissipation :

380mW

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

65V