SBC856BDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

80V

Lead Free :

Lead Free

Weight :

28.009329mg

Gain Bandwidth Product :

100MHz

Operating Temperature :

-55°C~150°C TJ

Transition Frequency :

100MHz

Number of Elements :

2

Frequency :

100MHz

Max Collector Current :

100mA

Radiation Hardening :

No

Pin Count :

6

Collector Emitter Voltage (VCEO) :

65V

Current - Collector Cutoff (Max) :

15nA ICBO

Max Breakdown Voltage :

65V

Max Power Dissipation :

380mW

Emitter Base Voltage (VEBO) :

-5V

Polarity :

PNP

Number of Terminations :

6

hFE Min :

220

Transistor Type :

2 PNP (Dual)

Package / Case :

6-TSSOP, SC-88, SOT-363

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

65V

JESD-609 Code :

e3

Collector Emitter Saturation Voltage :

-650mV

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Power Dissipation :

380mW

Terminal Finish :

Tin (Sn)

Continuous Collector Current :

-100mA

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

650mV @ 5mA, 100mA

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

220 @ 2mA 5V

Published :

2012

Number of Pins :

6

Factory Lead Time :

8 Weeks