SBC847CLT1G
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- Mfr.Part #
- SBC847CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 57,100
- In Stock ：
- 57,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Continuous Collector Current :
- 100mA
- Published :
- 2009
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 45V
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Width :
- 1.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Length :
- 3.04mm
- hFE Min :
- 420
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.01mm
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Datasheets
- SBC847CLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC847CLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
SBC847CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847CLT1G Applications
There are a lot of ON Semiconductor
SBC847CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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