SBC847CDW1T1G
- Mfr.Part #
- SBC847CDW1T1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS 2NPN 45V 0.1A SOT-363
- Stock
- 17,746
- In Stock :
- 17,746
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Arrays
- Configuration :
- SEPARATE, 2 ELEMENTS
- Number of Elements :
- 2
- Mounting Type :
- Surface Mount
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Length :
- 2.2mm
- Polarity :
- NPN
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 45V
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 50V
- Frequency - Transition :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Form :
- Gull wing
- Width :
- 1.35mm
- Collector Emitter Saturation Voltage :
- 600mV
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Height :
- 1mm
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Pins :
- 6
- Transistor Type :
- 2 NPN (Dual)
- Number of Terminations :
- 6
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Base Part Number :
- BC847CD
- Pin Count :
- 6
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Max Power Dissipation :
- 380mW
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Published :
- 2007
- Max Frequency :
- 100MHz
- Datasheets
- SBC847CDW1T1G

SBC847CDW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available at
The SBC847CDW1T1G is a NPN Bipolar Junction Transistor (BJT) Array from ON Semiconductor. It is a general-purpose transistor array with a maximum collector-emitter voltage of 45V and a maximum collector current of 0.1A. It is housed in a 6-pin SC-88 package and is suitable for a wide range of applications.
Features:
• NPN Bipolar Junction Transistor (BJT) Array
• Maximum Collector-Emitter Voltage: 45V
• Maximum Collector Current: 0.1A
• 6-Pin SC-88 Package
• Suitable for a Wide Range of Applications
Applications:
The SBC847CDW1T1G is suitable for a wide range of applications, including power management, audio amplifiers, motor control, and signal conditioning. It is also suitable for use in automotive, industrial, and consumer electronics.
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