SBC847BWT1G-M02
- Mfr.Part #
- SBC847BWT1G-M02
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SBC847BW - SMALL SIGNAL BIPOLAR
- Stock
- 243,831
- In Stock :
- 243,831
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 300MHz
- Transistor Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Voltage - Collector Emitter Breakdown (Max) :
- 45 V
- Package :
- Bulk
- Product Status :
- Obsolete
- Series :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA, 5V
- Current - Collector Cutoff (Max) :
- 15nA (ICBO)
- Supplier Device Package :
- SC-70 (SOT323)
- Current - Collector (Ic) (Max) :
- 100 mA
- Operating Temperature :
- 150°C (TJ)
- Mounting Type :
- Surface Mount
- Power - Max :
- 310 mW
- Datasheets
- SBC847BWT1G-M02
NPN 150°C (TJ) 15nA (ICBO) SC-70, SOT-323 Surface Mount
SBC847BWT1G-M02 Overview
In this device, the DC current gain is 200 @ 2mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Product comes in the supplier's device package SC-70 (SOT323).There is a 45 V maximal voltage in the device due to collector-emitter breakdown.
SBC847BWT1G-M02 Features
the DC current gain for this device is 200 @ 2mA, 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the supplier device package of SC-70 (SOT323)
SBC847BWT1G-M02 Applications
There are a lot of onsemi
SBC847BWT1G-M02 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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