SBC847BWT1G
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- Mfr.Part #
- SBC847BWT1G
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC88/SC70-6
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 150mW
- Packaging :
- Tape and Reel (TR)
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Max Collector Current :
- 100mA
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 45V
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 3
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Position :
- Dual
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 50V
- Series :
- Automotive, AEC-Q101
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 100mA
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Frequency :
- 100MHz
- Power Dissipation :
- 150mW
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Datasheets
- SBC847BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Surface Mount
SBC847BWT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 100mA volts.
SBC847BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847BWT1G Applications
There are a lot of ON Semiconductor
SBC847BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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