SBC847BPDW1T3G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Saturation Voltage :

600mV

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Number of Pins :

6

RoHS Status :

ROHS3 Compliant

Published :

2005

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

100mA

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Transistor Application :

AMPLIFIER

Mount :

Surface Mount

Transistor Type :

NPN, PNP

Package / Case :

6-TSSOP, SC-88, SOT-363

Pbfree Code :

yes

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

45V

Series :

Automotive, AEC-Q101

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

45V

Number of Elements :

2

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Gain Bandwidth Product :

100MHz

Element Configuration :

Dual

Current - Collector (Ic) (Max) :

100mA

Mounting Type :

Surface Mount

Emitter Base Voltage (VEBO) :

-5V

Polarity :

NPN, PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Max Power Dissipation :

380mW

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA

Number of Terminations :

6

Weight :

7.512624mg

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

15nA ICBO