SBC847BLT1G
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- Mfr.Part #
- SBC847BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 1,729
- In Stock ：
- 1,729
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Series :
- Automotive, AEC-Q101
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- hFE Min :
- 200
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 45V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Published :
- 2009
- Continuous Collector Current :
- 100mA
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Datasheets
- SBC847BLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC847BLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
SBC847BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC847BLT1G Applications
There are a lot of ON Semiconductor
SBC847BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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