SBC847AWT1G

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Mfr.Part #
SBC847AWT1G
Manufacturer
onsemi
Package / Case
SC-70, SOT-323
Datasheet
Download
Description
TRANS NPN 45V 0.1A SC70-3
Stock
33,540
In Stock :
33,540

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Transition Frequency :
100MHz
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Terminal Finish :
Tin (Sn)
Element Configuration :
Single
Published :
2007
JESD-609 Code :
e3
Collector Emitter Saturation Voltage :
250mV
Max Collector Current :
100mA
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
15nA ICBO
Collector Emitter Voltage (VCEO) :
45V
Collector Base Voltage (VCBO) :
50V
Number of Pins :
3
Pin Count :
3
Emitter Base Voltage (VEBO) :
6V
Factory Lead Time :
2 Weeks
Package / Case :
SC-70, SOT-323
Gain Bandwidth Product :
100MHz
Collector Emitter Breakdown Voltage :
45V
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Max Power Dissipation :
150mW
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce :
110 @ 2mA 5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Halogen Free :
Halogen Free
Transistor Type :
NPN
Radiation Hardening :
No
Current - Collector (Ic) (Max) :
100mA
Surface Mount :
yes
Series :
Automotive, AEC-Q101
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Datasheets
SBC847AWT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBC847AWT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:SC-70, SOT-323, SBC847AWT1G pinout, SBC847AWT1G datasheet PDF, SBC847AWT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBC847AWT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBC847AWT1G


NPN -55°C~150°C TJ 15nA ICBO NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount

SBC847AWT1G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 110 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 250mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 100MHz.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

SBC847AWT1G Features


the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz


SBC847AWT1G Applications


There are a lot of ON Semiconductor
SBC847AWT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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