SBC846BWT1G
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- Mfr.Part #
- SBC846BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SC70-3
- Stock
- 46,175
- In Stock ：
- 46,175
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Pin Count :
- 3
- Pbfree Code :
- yes
- Halogen Free :
- Halogen Free
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 65V
- Surface Mount :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 6V
- Series :
- Automotive, AEC-Q101
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 65V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 150mW
- Power Dissipation :
- 150mW
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 600mV
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 65V
- Published :
- 2007
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Datasheets
- SBC846BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SBC846BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 65V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
SBC846BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BWT1G Applications
There are a lot of ON Semiconductor
SBC846BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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