SBC846BLT3
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- Mfr.Part #
- SBC846BLT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 32,821
- In Stock ：
- 32,821
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 100MHz
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Power Dissipation :
- 300mW
- Width :
- 2.64mm
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Collector Emitter Saturation Voltage :
- 600mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pin Count :
- 3
- Published :
- 2011
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 80V
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 1.11mm
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Length :
- 3.04mm
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 65V
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 65V
- Collector Emitter Breakdown Voltage :
- 65V
- Number of Elements :
- 1
- Max Power Dissipation :
- 300mW
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- SBC846BLT3
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846BLT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 65V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
SBC846BLT3G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846BLT3G Applications
There are a lot of ON Semiconductor
SBC846BLT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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