SBC846ALT1G
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- Mfr.Part #
- SBC846ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 65V 0.1A SOT23-3
- Stock
- 8,318
- In Stock ：
- 8,318
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 100MHz
- hFE Min :
- 90
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Polarity/Channel Type :
- NPN
- Width :
- 1.4mm
- Length :
- 3.04mm
- Halogen Free :
- Halogen Free
- Surface Mount :
- yes
- Factory Lead Time :
- 5 Weeks
- Max Breakdown Voltage :
- 65V
- Number of Pins :
- 3
- Height :
- 1.01mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Saturation Voltage :
- 600mV
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Max Power Dissipation :
- 300mW
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 65V
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 65V
- Series :
- Automotive, AEC-Q101
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Datasheets
- SBC846ALT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC846ALT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 65V volts.When collector current reaches its maximum, it can reach 100mA volts.
SBC846ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
SBC846ALT1G Applications
There are a lot of ON Semiconductor
SBC846ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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