SBC817-40LT1G
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- Mfr.Part #
- SBC817-40LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 8,815
- In Stock ：
- 8,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- BC817
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Length :
- 3.04mm
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Width :
- 2.64mm
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 50V
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Halogen Free :
- Halogen Free
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 300mW
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 700mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Published :
- 2007
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Max Breakdown Voltage :
- 45V
- Operating Temperature :
- -65°C~150°C TJ
- Height :
- 1.11mm
- Datasheets
- SBC817-40LT1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-40LT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 500mA volts is possible.
SBC817-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-40LT1G Applications
There are a lot of ON Semiconductor
SBC817-40LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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