SBC817-25LT3G
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- Mfr.Part #
- SBC817-25LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 4,116
- In Stock ：
- 4,116
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 10 Weeks
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Pin Count :
- 3
- hFE Min :
- 160
- Halogen Free :
- Halogen Free
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Terminal Finish :
- Tin (Sn)
- Width :
- 2.64mm
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- BC817
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Height :
- 1.11mm
- Surface Mount :
- yes
- Length :
- 3.04mm
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Form :
- Gull wing
- Power Dissipation :
- 300mW
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Continuous Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Datasheets
- SBC817-25LT3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-25LT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.With a collector emitter saturation voltage of 700mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
SBC817-25LT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-25LT3G Applications
There are a lot of ON Semiconductor
SBC817-25LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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