SBC817-25LT1G
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- Mfr.Part #
- SBC817-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 5,655
- In Stock ：
- 5,655
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Max Frequency :
- 100MHz
- Published :
- 2009
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Pin Count :
- 3
- Power Dissipation :
- 300mW
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage :
- 45V
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- hFE Min :
- 160
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC817
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Halogen Free :
- Halogen Free
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- -65°C~150°C TJ
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Max Power Dissipation :
- 300mW
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 500mA
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Datasheets
- SBC817-25LT1G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-25LT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
SBC817-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC817-25LT1G Applications
There are a lot of ON Semiconductor
SBC817-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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