SBC817-16LT3G
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- Mfr.Part #
- SBC817-16LT3G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 288,298
- In Stock ：
- 288,298
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 45V
- Length :
- 3.04mm
- Pbfree Code :
- yes
- Max Collector Current :
- 500mA
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 700mV
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Max Power Dissipation :
- 300mW
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2009
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Width :
- 2.64mm
- Max Frequency :
- 100MHz
- Terminal Position :
- Dual
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Factory Lead Time :
- 6 Weeks
- Surface Mount :
- yes
- Number of Terminations :
- 3
- Height :
- 1.11mm
- Operating Temperature :
- -65°C~150°C TJ
- Element Configuration :
- Single
- Continuous Collector Current :
- 500mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Collector Emitter Voltage (VCEO) :
- 45V
- hFE Min :
- 100
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Base Part Number :
- BC817
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- NPN
- Datasheets
- SBC817-16LT3G
NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-16LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 45V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
SBC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 45V
a transition frequency of 100MHz
SBC817-16LT3G Applications
There are a lot of ON Semiconductor
SBC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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