SBC817-16LT3
- Mfr.Part #
- SBC817-16LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.5A SOT23-3
- Stock
- 47,236
- In Stock :
- 47,236
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Base Part Number :
- BC817
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 50V
- Height :
- 1.11mm
- Emitter Base Voltage (VEBO) :
- 45V
- Width :
- 2.64mm
- Collector Emitter Saturation Voltage :
- 700mV
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- hFE Min :
- 100
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 500mA
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Max Frequency :
- 100MHz
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Published :
- 2009
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Continuous Collector Current :
- 500mA
- Length :
- 3.04mm
- Factory Lead Time :
- 6 Weeks
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 300mW
- Datasheets
- SBC817-16LT3

NPN -65°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC817-16LT3G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 500mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 45V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 500mA volts.
SBC817-16LT3G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 45V
a transition frequency of 100MHz
SBC817-16LT3G Applications
There are a lot of ON Semiconductor
SBC817-16LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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