SBC808-25LT1G
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- Mfr.Part #
- SBC808-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SBC808-25 - PNP BIPOLAR TRANSIST
- Stock
- 25,061
- In Stock ：
- 25,061
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Published :
- 2011
- Base Part Number :
- BC808
- Gain Bandwidth Product :
- 100MHz
- Halogen Free :
- Halogen Free
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Collector Emitter Voltage (VCEO) :
- 25V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Current - Collector (Ic) (Max) :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 30V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Element Configuration :
- Single
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 300mW
- Collector Emitter Breakdown Voltage :
- 25V
- Polarity/Channel Type :
- PNP
- Datasheets
- SBC808-25LT1G
PNP -55°C~150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC808-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
SBC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC808-25LT1G Applications
There are a lot of ON Semiconductor
SBC808-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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