SBC808-25LT1G
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- Mfr.Part #
- SBC808-25LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A SOT23-3
- Stock
- 9,930
- In Stock ：
- 9,930
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2011
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 25V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- PNP
- Current - Collector (Ic) (Max) :
- 500mA
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 25V
- Collector Base Voltage (VCBO) :
- 30V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Halogen Free :
- Halogen Free
- Operating Temperature :
- -55°C~150°C TJ
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC808
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transition Frequency :
- 100MHz
- Datasheets
- SBC808-25LT1G
PNP -55°C~150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC808-25LT1G Overview
In this device, the DC current gain is 160 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
SBC808-25LT1G Features
the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC808-25LT1G Applications
There are a lot of ON Semiconductor
SBC808-25LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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