SBC807-40WT1G
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- Mfr.Part #
- SBC807-40WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SC70-3
- Stock
- 6,705
- In Stock ：
- 6,705
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Width :
- 1.35mm
- Frequency :
- 100MHz
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- hFE Min :
- 250
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Base Part Number :
- BC807
- Max Collector Current :
- 500mA
- Height :
- 900μm
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Power Dissipation :
- 460mW
- Length :
- 2.2mm
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- -700mV
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- SC-70, SOT-323
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Max Power Dissipation :
- 460mW
- Factory Lead Time :
- 5 Weeks
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- SBC807-40WT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
SBC807-40WT1G Overview
In this device, the DC current gain is 250 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -700mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.100MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
SBC807-40WT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
SBC807-40WT1G Applications
There are a lot of ON Semiconductor
SBC807-40WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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