SBC807-40LT3
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- Mfr.Part #
- SBC807-40LT3
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 37,524
- In Stock ：
- 37,524
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 300mW
- Terminal Form :
- Gull wing
- Base Part Number :
- BC807
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.4mm
- Transition Frequency :
- 100MHz
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- hFE Min :
- 250
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Continuous Collector Current :
- -500mA
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 5 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 100mA 1V
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- -700mV
- Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.01mm
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 3.04mm
- Published :
- 2006
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Datasheets
- SBC807-40LT3
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC807-40LT3G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -700mV.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at -500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 500mA volts is possible.
SBC807-40LT3G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 100MHz
SBC807-40LT3G Applications
There are a lot of ON Semiconductor
SBC807-40LT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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