SBC807-25WT1G

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Mfr.Part #
SBC807-25WT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 45V 0.5A SOT23-3
Stock
2,469
In Stock :
2,469

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
460mW
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
460mW
RoHS Status :
ROHS3 Compliant
Series :
Automotive, AEC-Q101
Emitter Base Voltage (VEBO) :
5V
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Collector Emitter Voltage (VCEO) :
700mV
Operating Temperature :
-55°C~150°C TJ
Published :
2011
Frequency - Transition :
100MHz
Radiation Hardening :
No
Collector Emitter Breakdown Voltage :
45V
Base Part Number :
BC807
Transistor Type :
PNP
Pin Count :
3
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
700mV @ 50mA, 500mA
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Max Collector Current :
500mA
Lead Free :
Lead Free
Factory Lead Time :
5 Weeks
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
50V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Halogen Free :
Halogen Free
JESD-609 Code :
e3
Datasheets
SBC807-25WT1G
Introducing Transistors - Bipolar (BJT) - Single onsemi SBC807-25WT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:BC807, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, SBC807-25WT1G pinout, SBC807-25WT1G datasheet PDF, SBC807-25WT1G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi SBC807-25WT1G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi SBC807-25WT1G


PNP -55°C~150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

SBC807-25WT1G Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Collector current can be as low as 500mA volts at its maximum.

SBC807-25WT1G Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V


SBC807-25WT1G Applications


There are a lot of ON Semiconductor
SBC807-25WT1G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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