SBC807-16LT1G
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- Mfr.Part #
- SBC807-16LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A SOT23-3
- Stock
- 35,420
- In Stock ：
- 35,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 100MHz
- Length :
- 3.04mm
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- -700mV
- Current - Collector (Ic) (Max) :
- 500mA
- Number of Elements :
- 1
- Max Frequency :
- 100MHz
- Element Configuration :
- Single
- Halogen Free :
- Halogen Free
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Width :
- 2.64mm
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Radiation Hardening :
- No
- Height :
- 1.11mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 50mA, 500mA
- Max Power Dissipation :
- 300mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 5 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Published :
- 2010
- Base Part Number :
- BC807
- Datasheets
- SBC807-16LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
SBC807-16LT1G Overview
DC current gain in this device equals 100 @ 100mA 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -700mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 50mA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.In extreme cases, the collector current can be as low as 500mA volts.
SBC807-16LT1G Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
SBC807-16LT1G Applications
There are a lot of ON Semiconductor
SBC807-16LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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