S8550-C-AP
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- Mfr.Part #
- S8550-C-AP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.5A TO92
- Stock
- 32,807
- In Stock ：
- 32,807
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 50mA, 500mA
- Frequency - Transition :
- 150MHz
- JESD-30 Code :
- O-PBCY-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 50mA 1V
- Current - Collector Cutoff (Max) :
- 200nA
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 12 Weeks
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 625mW
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector (Ic) (Max) :
- 500mA
- Terminal Position :
- BOTTOM
- Datasheets
- S8550-C-AP
PNP -55°C~150°C TJ 200nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Formed Leads Through Hole
S8550-C-AP Overview
In this device, the DC current gain is 120 @ 50mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 25V maximal voltage in the device due to collector-emitter breakdown.
S8550-C-AP Features
the DC current gain for this device is 120 @ 50mA 1V
the vce saturation(Max) is 600mV @ 50mA, 500mA
a transition frequency of 150MHz
S8550-C-AP Applications
There are a lot of Micro Commercial Co
S8550-C-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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