S2SC4617G
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- Mfr.Part #
- S2SC4617G
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.1A SC75 SOT416
- Stock
- 31,453
- In Stock ：
- 31,453
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 180MHz
- Max Power Dissipation :
- 125mW
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Published :
- 2014
- Mounting Type :
- Surface Mount
- Base Part Number :
- 2SC4617
- Transition Frequency :
- 180MHz
- Max Collector Current :
- 100mA
- hFE Min :
- 120
- Continuous Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1mA 6V
- Pbfree Code :
- yes
- Power Dissipation :
- 125mW
- Surface Mount :
- yes
- Package / Case :
- SC-75, SOT-416
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 60mA
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Frequency :
- 180MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 400mV
- Terminal Finish :
- Tin (Sn)
- Datasheets
- S2SC4617G
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
S2SC4617G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 1mA 6V DC current gain.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 100mA volts.
S2SC4617G Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 60mA
the emitter base voltage is kept at 5V
a transition frequency of 180MHz
S2SC4617G Applications
There are a lot of ON Semiconductor
S2SC4617G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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