RW1A030APT2CR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

700mW Ta

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin/Copper (Sn/Cu)

Transistor Element Material :

SILICON

JESD-609 Code :

e2

Rds On (Max) @ Id, Vgs :

42m Ω @ 3A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 6V

Terminal Form :

Flat

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

3A

Lead Free :

Lead Free

Pin Count :

6

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

12V

Number of Elements :

1

Factory Lead Time :

10 Weeks

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 1mA

Qualification Status :

Not Qualified

Package / Case :

SOT-563, SOT-666

Drain to Source Voltage (Vdss) :

12V

Mount :

Surface Mount

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Drain-source On Resistance-Max :

0.042Ohm

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Pbfree Code :

yes

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Continuous Drain Current (ID) :

3A

Vgs (Max) :

-8V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V