RW1A020ZPT2R

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

10 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

6

Radiation Hardening :

No

Number of Elements :

1

Max Operating Temperature :

150°C

Drain to Source Voltage (Vdss) :

12V

Drain to Source Breakdown Voltage :

-12V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

10 ns

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Continuous Drain Current (ID) :

2A

Rise Time :

17ns

Fall Time (Typ) :

35 ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Rds On Max :

105 mΩ

Number of Channels :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

10V

Drain Current-Max (Abs) (ID) :

2A

Published :

2009

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Max Power Dissipation :

700mW

Input Capacitance :

770pF

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Terminations :

6

Terminal Finish :

Tin/Copper (Sn/Cu)

Drain to Source Resistance :

75mOhm

Lead Free :

Lead Free

Polarity/Channel Type :

P-Channel

Min Operating Temperature :

-55°C

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e2

Turn-Off Delay Time :

65 ns

Pin Count :

6