RTL035N03TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2001

Current Rating :

3.5A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 4.5V

Pbfree Code :

yes

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

12V

Package / Case :

6-SMD, Flat Leads

Turn-Off Delay Time :

32 ns

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

20 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

1.5V @ 1mA

Turn On Delay Time :

9 ns

Terminal Finish :

Tin/Copper (Sn/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Height :

770μm

Number of Elements :

1

Rise Time :

25ns

Width :

1.7mm

Voltage - Rated DC :

30V

Resistance :

79mOhm

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 10V

Terminal Position :

Dual

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

1.5V

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Power Dissipation :

1W

Continuous Drain Current (ID) :

3.5A

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

56m Ω @ 3.5A, 4.5V

Power Dissipation-Max :

1W Ta

Mounting Type :

Surface Mount

Pin Count :

6

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

Factory Lead Time :

20 Weeks

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

3.5A Ta

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Length :

2mm

JESD-609 Code :

e2