RTL020P02TR
- Mfr.Part #
- RTL020P02TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SMD/SMT
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2A TUMT6
- Stock
- 19,248
- In Stock :
- 19,248
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Terminal Finish :
- TIN COPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Min Operating Temperature :
- -55°C
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- -30V
- Current Rating :
- -2A
- Input Capacitance :
- 430pF
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 11 ns
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SMD/SMT
- Voltage - Rated DC :
- -20V
- Factory Lead Time :
- 20 Weeks
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1W
- Drain Current-Max (Abs) (ID) :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Rise Time :
- 13ns
- Continuous Drain Current (ID) :
- 2A
- Turn-Off Delay Time :
- 38 ns
- JESD-30 Code :
- R-PDSO-F6
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 12 ns
- Number of Pins :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- P-Channel
- Power Dissipation :
- 1W
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On Max :
- 135 mΩ
- Gate to Source Voltage (Vgs) :
- 12V
- Drain to Source Resistance :
- 180mOhm
- Published :
- 2004
- Resistance :
- 135mOhm
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Number of Terminations :
- 6
- JESD-609 Code :
- e2
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Terminal Form :
- Flat
- Datasheets
- RTL020P02TR

Tape & Reel (TR) 20V SMD/SMT
RTL020P02TR Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=-30V, and ID flows to VDS at -30VVDS, the drain-source breakdown voltage is -30V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 38 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 180mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.
RTL020P02TR Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 38 ns
single MOSFETs transistor is 180mOhm
a 20V drain to source voltage (Vdss)
RTL020P02TR Applications
There are a lot of ROHM Semiconductor
RTL020P02TR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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