RT1E050RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 10V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Number of Elements :

1

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

5A

Lead Free :

Lead Free

Power Dissipation-Max :

1.25W Ta

Pin Count :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

10

Drain Current-Max (Abs) (ID) :

5A

Factory Lead Time :

10 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

JESD-30 Code :

R-PDSO-F8

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Published :

2010

Mount :

Surface Mount

Terminal Position :

Dual

Packaging :

Cut Tape (CT)

Number of Terminations :

8

Drain-source On Resistance-Max :

0.036Ohm

Rds On (Max) @ Id, Vgs :

36m Ω @ 5A, 10V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Package / Case :

8-SMD, Flat Lead