RT1E040RPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Number of Elements :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

8

Continuous Drain Current (ID) :

4A

JESD-30 Code :

R-PDSO-F8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

16A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Dual

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Package / Case :

8-SMD, Flat Lead

Published :

2012

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Packaging :

Cut Tape (CT)

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 4A, 10V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.045Ohm

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Drain to Source Voltage (Vdss) :

30V

FET Type :

P-Channel

Drain Current-Max (Abs) (ID) :

4A

Number of Terminations :

8

Power Dissipation-Max :

550mW Ta

Mounting Type :

Surface Mount