RT1A045APTCR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.03Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

1V @ 1mA

Mount :

Surface Mount

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-F8

Input Capacitance (Ciss) (Max) @ Vds :

4200pF @ 6V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Drain to Source Voltage (Vdss) :

12V

Number of Terminations :

8

Number of Elements :

1

Power Dissipation-Max :

650mW Ta

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

DS Breakdown Voltage-Min :

12V

Current - Continuous Drain (Id) @ 25°C :

4.5A Ta

Factory Lead Time :

10 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

-8V

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

30m Ω @ 4.5A, 4.5V

Continuous Drain Current (ID) :

4.5A

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Published :

2012

Transistor Element Material :

SILICON

Operating Temperature :

150°C TJ

ECCN Code :

EAR99