RT1A040ZPTR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Rds On Max :

30 mΩ

Turn-Off Delay Time :

380 ns

Terminal Form :

Flat

Rise Time :

70ns

Peak Reflow Temperature (Cel) :

260

Resistance :

30mOhm

Radiation Hardening :

No

Turn On Delay Time :

11 ns

Drain Current-Max (Abs) (ID) :

4A

Terminal Finish :

TIN COPPER

Number of Terminations :

8

Pin Count :

8

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

JESD-609 Code :

e2

Gate to Source Voltage (Vgs) :

10V

Number of Pins :

8

Max Power Dissipation :

1.25W

Max Operating Temperature :

150°C

Drain to Source Resistance :

30mOhm

Time@Peak Reflow Temperature-Max (s) :

10

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Min Operating Temperature :

-55°C

Input Capacitance :

2.35nF

Drain to Source Breakdown Voltage :

12V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Polarity/Channel Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

16A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

4A

Fall Time (Typ) :

70 ns

Mount :

Surface Mount

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

12V

Number of Elements :

1

Power Dissipation :

1.25W