RSS130N03FU6TB
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- Mfr.Part #
- RSS130N03FU6TB
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13A 8SOP
- Stock
- 12,537
- In Stock ：
- 12,537
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rise Time :
- 30ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Operating Temperature :
- 150°C TJ
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 8
- Resistance :
- 11.1mOhm
- Turn On Delay Time :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Power Dissipation :
- 2W
- FET Type :
- N-Channel
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Configuration :
- Single
- Published :
- 2004
- Power Dissipation-Max :
- 2W Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 10V
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 8.1m Ω @ 13A, 10V
- Dual Supply Voltage :
- 30V
- Turn-Off Delay Time :
- 88 ns
- Fall Time (Typ) :
- 55 ns
- REACH SVHC :
- No SVHC
- Continuous Drain Current (ID) :
- 13A
- Nominal Vgs :
- 2.5 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2000pF @ 10V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Datasheets
- RSS130N03FU6TB
N-Channel Tape & Reel (TR) 8.1m Ω @ 13A, 10V 2000pF @ 10V 35nC @ 5V 8-SOIC (0.154, 3.90mm Width)
RSS130N03FU6TB Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2000pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 88 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.
RSS130N03FU6TB Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 88 ns
RSS130N03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS130N03FU6TB applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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